The flexibility provided by full dielectric isolation and the quasi-ideal properties of the SOI MOSFET (sharp subthreshold slope, low body-effect coefficient,...) have given rise to new fields of applications for SOI devices. Beside high-temperature and radiation hard niche applications, SOI technology is now increasingly used for the fabrication of low-voltage, low-power CMOS circuits, high-frequency (microwave) devices, and power devices. Some novel SOI devices have been recently reported as well.
CITATION STYLE
Colinge, J. P. (1994). Recent advances in SOI technology. In Technical Digest - International Electron Devices Meeting (pp. 817–820). IEEE. https://doi.org/10.1109/iedm.1994.383299
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