Self-Consistent potential calculation for locally oxidized Ga[Al]As heterostructures

doi:10.1007/s10820-006-9023-z

Self-Consistent potential calculation for locally oxidized Ga[Al]As heterostructures

by C May, K Ensslin, M Troyer

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Journal of ComputerAided Materials Design (2007)

Volume: 14, Issue: 1, Publisher: Springer Netherlands, Pages: 91-96

ISSN: 09281045
DOI: 10.1007/s10820-006-9023-z

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Abstract

We simulate the influence of local oxidation with an atomic force microscope (AFM) tip on the surface of a GaAlAs/GaAs heterostructure by means of numerical calculations. Assuming a rectangular shape of the oxide line, we solve the Schrödinger and Poisson equations self-consistently on a two-dimensional sur- face perpendicular to the oxide line. We observe that the distance between the two-dimensional electron gas (2DEG) and the surface is a crucial parameter for the electron density, confirming experimental 2DEG depletion results.

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Self-Consistent potential calculation for locally oxidized Ga[Al]As heterostructures