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Journal Article

Si Ultra Shallow Junctions Dopant Profiling with ADF-STEM

  • Parisini A
  • Giubertoni D
  • Bersani M
  • et al.
MRS Proceedings (2007) 1026
DOI: 10.1557/proc-1026-c09-04
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Abstract

In this work, we show how the Z-contrast annular dark field scanning transmission electron microscopy technique can provide reliable dopant profiles in ultra shallow junctions in Si. Dopant profiles obtained with this technique are compared with those obtained by spectroscopic techniques like secondary ion mass spectroscopy and medium energy ion scattering.

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Parisini, A., Giubertoni, D., Bersani, M., Morandi, V., Merli, P. G., & van den Berg, J. A. (2007). Si Ultra Shallow Junctions Dopant Profiling with ADF-STEM. MRS Proceedings, 1026. https://doi.org/10.1557/proc-1026-c09-04

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