Structural characterization of photoluminescent porous silicon with FTIR spectroscopy

Abstract

This paper presents an analytical model which is proposed to determine morphological parameters of porous silicon (PS) using results obtained with the Fourier Transform Infrared (FTIR) characterization techniques. Using the proposed model, it was found that porous silicon layers have porous size of 6.6 nm, specific surface of 600 m2/cm3 and the residual crystal size ∼ 3.7 nm. The PS and oxidized PS were characterized with Photoluminescence (PL) and FTIR techniques. These techniques give some evidences of the possible quantum confinement effect in PS layer. However it is necessary to have caution at this point.