Research Fellow 2 for Photonics @ Interface: Si/LN Hybrid

Location
Highfield Campus, UK
Salary
£30,395 to £33,199 Per annum
Posted
Jul 02, 2019
Closes
Aug 02, 2019
Ref
1155619FP
Contract Type
Full Time
Sustainable Electronic Technologies Location: Highfield Campus
Salary: £30,395 to £33,199 Per annum
Full Time Fixed Term for 4 years
Closing Date: Wednesday 31 July 2019
Interview Date: To be confirmed
Reference: 1155619FP

Applications are invited for a full time fixed term 4 year Research Fellow position at the University of Southampton, to undertake research on the EPSRC funded Standard Grant Project, " Photonics @ Interface: Heterogeneous Integrations for Generation, Detection, Conversion, and Modulation ".

You will develop Si/LN hybrid devices working very closely with another researcher working for Si/Ge APD by developing novel heterogeneous interfaces.

We will develop novel photonic devices by bonding two different semiconductor substrates with different spacing between atoms. It was very difficult to ensure an excellent quality at the interface, because the atoms cannot connect perfectly, if the lattice spacing is different. The quality of the interface is very important to make sure to reduce defects in the atomic scale. We will use the interface for making a highly sensitive detector to identify even just single photon (quantum of light), which is impossible to realise with defects due to the noise from additional carriers created by defects. This detector will be useful for future quantum technologies to enable secure communications and powerful commutations. We will also develop a novel laser and high speed optical switches by using this interface.

Our project is summarised as follows:

Novel Manufacturing Technologies for Enabling Heterogeneous Integrations: We will develop new wafer-scale bonding process technologies to allow excellent interface qualities without defects. Our challenges to overcome the difference of lattice constants and thermal expansion constants for bonded materials. We will accumulate comprehensive knowledge for new bonding techniques.

Si/Ge Avalanche-Photo-Diodes and Si/Ge Lasers: The strain engineered interface will enable us to reduce dark currents of Si/Ge Avalanche-Photo-Diodes (APDs) to the level useful for detecting single photons at room temperature. Si/Ge APDs are also useful for LiDAR (Laser Imaging Detection and Ranging). The improved interface quality also enables to achieve lasing of Ge on a Si substrate towards monolithic integrations.

We think our approach will establish a new way of making heterogeneous interface with improved quality. Wafer-scale bonding of a patterned substrate is certainly well-known, but the nano-scale patterning to form perfect bonding in atomic-scale has not yet been achieved, yet. We will accumulate comprehensive knowledge on the developed interface, in terms of various physical parameters such as strains, voids, adhesions, and defects for researchers in nanoelectronics and photonics.

To be successful you will have a PhD in Electronics or Physics or equivalent professional qualifications and experience in research for materials.

The University of Southampton is an institution in the top one per cent of world universities* and one of the UK's top 15 research-intensive universities. We have an international reputation for research, teaching and enterprise and hold an Athena SWAN Silver award.

Applications for Research Fellow positions will be considered from candidates who are working towards or nearing completion of a relevant PhD qualification. The title of Research Fellow will be applied upon successful completion of the PhD. Prior to the qualification being awarded, the title of Senior Research Assistant will be assigned.

Application Procedure

You should submit your completed online application form at https://jobs.soton.ac.uk . The application deadline will be midnight on the closing date stated above. If you need any assistance, please call Hannah Farrance (Recruitment Team) on +44 (0) 23 8059 2507. Please quote reference 1155619FP on all correspondence.