A CMOS, fully integrated sensor for electronic detection of DNA hybridization

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Abstract

An integrated field-effect device for fully electronic deoxyribonucleic acid (DNA) detection was realized in a standard CMOS process. The device is composed of a floating-gate MOS transistor, a control-capacitor acting as integrated counterelectrode, and an exposed active area for DNA immobilization. The drain-current of the transistor is modulated by the electric charge carried by the DNA molecules. After DNA hybridization, this charge increases and a change in the output current is measured. Experimental results are provided. Full compatibility with a standard CMOS process opens the way to the realization of low-cost large-scale integration of fast electronic DNA detectors. © 2006 IEEE.

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Barbaro, M., Bonfiglio, A., Raffo, L., Alessandrini, A., Facci, P., & Barák, I. (2006). A CMOS, fully integrated sensor for electronic detection of DNA hybridization. IEEE Electron Device Letters, 27(7), 595–597. https://doi.org/10.1109/LED.2006.876303

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