Contact resistance and megahertz operation of aggressively scaled organic transistors

Abstract

Bottom-gate, top-contact organic thin-film transistors (TFTs) with excellent static characteristics (on/off ratio: 10 7; intrinsic mobility: 3 cm 2 (V s) -1) and fast unipolar ring oscillators (signal delay as short as 230 ns per stage) are fabricated. The significant contribution of the transfer length to the relation between channel length, contact length, contact resistance, effective mobility, and cutoff frequency of the TFTs is theoretically and experimentally analyzed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.