Evidence of nanocrystalline semiconducting graphene monoxide during thermal reduction of graphene oxide in vacuum

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Abstract

As silicon-based electronics are reaching the nanosize limits of the semiconductor roadmap, carbon-based nanoelectronics has become a rapidly growing field, with great interest in tuning the properties of carbon-based materials. Chemical functionalization is a proposed route, but syntheses of graphene oxide (G-O) produce disordered, nonstoichiometric materials with poor electronic properties. We report synthesis of an ordered, stoichiometric, solid-state carbon oxide that has never been observed in nature and coexists with graphene. Formation of this material, graphene monoxide (GMO), is achieved by annealing multilayered G-O. Our results indicate that the resulting thermally reduced G-O (TRG-O) consists of a two-dimensional nanocrystalline phase segregation: unoxidized graphitic regions are separated from highly oxidized regions of GMO. GMO has a quasi-hexagonal unit cell, an unusually high 1:1 O:C ratio, and a calculated direct band gap of ∼0.9 eV. © 2011 American Chemical Society.

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Mattson, E. C., Pu, H., Cui, S., Schofield, M. A., Rhim, S., Lu, G., … Hirschmugl, C. J. (2011). Evidence of nanocrystalline semiconducting graphene monoxide during thermal reduction of graphene oxide in vacuum. ACS Nano, 5(12), 9710–9717. https://doi.org/10.1021/nn203160n

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