This chapter begins with an overview of digital and analog semiconductor technology. Following this, tradeoffs between various device designs are discussed for Si FETs. Analog (RF) applications require a low access resistance and small mobility degradation from dielectrics-the former is discussed in detail in this chapter, while the latter is the topic of Chap. 9. Digital FETs need certain criteria to be met-foremost amongst them being bandgap opening and complementary operation. Both these topics are discussed in detail in this chapter. Geometrical scaling of graphene FETs-including width and length scaling-is discussed along with implications for edge-scattering and methods to reduce it. Circuit implementations of graphene FETs are looked into including mixers, frequency multipliers, and inverters. A few non-FET structures are also looked at such as the Klein tunneling transistor.
CITATION STYLE
Murali, R. (2012). Graphene transistors. In Graphene Nanoelectronics: From Materials to Circuits (Vol. 9781461405481, pp. 51–91). Springer US. https://doi.org/10.1007/978-1-4614-0548-1_3
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