We show that the growth kinetics of dense arrays of self-induced GaN nanowires involves the exchange of Ga atoms between nanowires: Ga atoms desorbed from the side surfaces of nanowires readsorb on neighboring nanowires. This process favors the growth of shorter nanowires and gives rise to a narrow nanowire height distribution during the late stages of growth. We propose a stochastic differential equation model which describes the growth of dense nanowire ensembles. The model calculations are in good agreement with the experiments. © 2013 AIP Publishing LLC.
CITATION STYLE
Sabelfeld, K. K., Kaganer, V. M., Limbach, F., Dogan, P., Brandt, O., Geelhaar, L., & Riechert, H. (2013). Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder. Applied Physics Letters, 103(13). https://doi.org/10.1063/1.4822110
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