The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena. © 2008 The American Physical Society.
CITATION STYLE
Pu, Y., Chiba, D., Matsukura, F., Ohno, H., & Shi, J. (2008). Mott relation for anomalous hall and nernst effects in Ga1-xMnxAs ferromagnetic semiconductors. Physical Review Letters, 101(11). https://doi.org/10.1103/PhysRevLett.101.117208
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