We review recent work on Raman spectroscopy of graphite and graphene. We focus on the origin of the D and G peaks and the second order of the D peak. The G and 2 D Raman peaks change in shape, position and relative intensity with number of graphene layers. This reflects the evolution of the electronic structure and electron-phonon interactions. We then consider the effects of doping on the Raman spectra of graphene. The Fermi energy is tuned by applying a gate-voltage. We show that this induces a stiffening of the Raman G peak for both holes and electrons doping. Thus Raman spectroscopy can be efficiently used to monitor number of layers, quality of layers, doping level and confinement. © 2007 Elsevier Ltd. All rights reserved.
CITATION STYLE
Ferrari, A. C. (2007). Raman spectroscopy of graphene and graphite: Disorder, electron-phonon coupling, doping and nonadiabatic effects. Solid State Communications, 143(1–2), 47–57. https://doi.org/10.1016/j.ssc.2007.03.052
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