Abstract
We report resonant Raman scattering (RRS) by the TO, LO, and 2 LO modes of single wurtzite and zinc-blende GaAs nanowires. The optical band gap of wurtzite GaAs is 1.460eV±3meV at room temperature, and 35±3meV larger than the GaAs zinc-blende band gap. Raman measurements using incoming light polarized parallel and perpendicular to the wire c axis allowed us to investigate the splitting of heavy Γ 9 and light-hole Γ 7 band at the Γ point of 65±6meV. © 2012 American Physical Society.
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CITATION STYLE
Kusch, P., Breuer, S., Ramsteiner, M., Geelhaar, L., Riechert, H., & Reich, S. (2012). Band gap of wurtzite GaAs: A resonant Raman study. Physical Review B - Condensed Matter and Materials Physics, 86(7). https://doi.org/10.1103/PhysRevB.86.075317
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