Passivation of Si wafers by ALD-Al2O3 films with different surface conditioning

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Abstract

We investigate the passivation quality of Al2O3 thin films grown by atomic laver deposition on differently etched surfaces of ∼500 μm thick, 2.13 Ωcm p-type float zone silicon wafers with an (100) crystal orientation. The applied CP- and KOH-etches lead to differently shaped surface morphologies but almost equal root-mean-squared (rms) roughnesses of ∼0.95 nm (CP) and ∼1.07 nm (KOH) measured within an area of 1×1 μm2 on the Si surface. The lowest surface recombination velocities after passivation resulting in effective carrier lifetimes up to 10 ms are achieved for samples treated with CP-etching. The lifetime is determined using a WCT-120 in the transient mode. It is shown that these lifetimes slightly exceed the theoretical limit given by a parameterization of the Auger recombination. Furthermore, scanning electron microscope images show that Al2O3 thin films with a thickness of ∼29 nm and ∼58 nm fully cover random pyramid textured Si surfaces of (111) orientation leading to high effective lifetimes up to 6 ms. The temperature of the wafer surface during the deposition is determined by in situ spectroscopic ellipsometry to be ∼180°C. © 2010 Published by Elsevier Ltd.

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Lüder, T., Hahn, G., & Terheiden, B. (2011). Passivation of Si wafers by ALD-Al2O3 films with different surface conditioning. In Energy Procedia (Vol. 8, pp. 660–665). Elsevier Ltd. https://doi.org/10.1016/j.egypro.2011.06.198

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