Single Stage 38 GHz LNA using 0.1 μm GaAs HEMT

Abstract

Design of a 38 GHz low noise amplifier using a single stage common source (SSCS) with source degenerated with inductor topology with gain of 9 dB and noise figure (NF) of 1.5 dB using 0.1 µm GaAs pHEMT as active device is proposed in this paper. CS with source degenerated with inductor topology of 0.1 µm GaAs pHEMT resulted a very low NF compared to other HEMT technologies as well as other CMOS technologies at this RF range.