Atomic layer deposition of ZrO2 thin films with high dielectric constant on TiN substrates

Abstract

ZrO2 thin films were grown on TiN substrates by atomic layer deposition. A high dielectric constant (∼40) was obtained due to the formation of a high-temperature crystalline form, tetragonal or cubic. The origin of the formation of the high-temperature form was examined by depositing ZrO2 films on two types of TiO2 surfaces, anatase and rutile. Tetragonal or cubic ZrO2 films were formed on both substrates. This suggests that growth-controlled selection is responsible for the formation of the metastable phase ZrO2, not the minimization of interfacial energy. © 2007 The Electrochemical Society.