Conference ProceedingsOPEN ACCESS

Gallium Nitride FET Model

IOP Conference Series: Materials Science and Engineering (2019) 475(1)
DOI: 10.1088/1757-899X/475/1/012007
0Citations
Citations of this article
5Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the source-drain resistance, different interface trap densities and self-heating effects.

Cite

CITATION STYLE

APA

Orlov, V. V., & Zebrev, G. I. (2019). Gallium Nitride FET Model. In IOP Conference Series: Materials Science and Engineering (Vol. 475). Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/475/1/012007

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free