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Improved magnetization in sputtered dysprosium thin films

Journal of Physics D: Applied Physics (2013) 46(15)
DOI: 10.1088/0022-3727/46/15/152001
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Abstract

50 nm thick nanogranular polycrystalline dysprosium thin films have been prepared via ultra-high vacuum direct-current sputtering on SiO2 and Si wafers. The maximum in-plane spontaneous magnetization at T = 4 K was found to be μ0M(C)S,4K = (3.28 ±0.26) Tfor samples deposited on wafers heated to 350 °C with a Néel point of T. © 2013 IOP Publishing Ltd.

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APA

Scheunert, G., Hendren, W. R., Lapicki, A. A., Jesudoss, P., Hardeman, R., Gubbins, M., & Bowman, R. M. (2013). Improved magnetization in sputtered dysprosium thin films. Journal of Physics D: Applied Physics, 46(15). https://doi.org/10.1088/0022-3727/46/15/152001

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