Thermal decomposition of ethylene on Si(1 1 1): Formation of the Si(1 1 1)sqrt(3) × sqrt(3):carbon structure

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Abstract

Adsorption and thermal decomposition of ethylene on Si(1 1 1) have been studied by photoelectron spectroscopy. The evolution of the C 1s and Si 2p core-levels upon the adsorption of the ethylene and the formation of C-incorporated surfaces by thermal annealing is analyzed, from which the unique chemical and structural properties of sqrt(3) × sqrt(3) reconstructed phase can be derived. We also discuss the coverage of the C atoms involved and their position on the sqrt(3) × sqrt(3) surface in terms of a structure model. © 2006 Elsevier B.V. All rights reserved.

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Kim, J. W., Kampen, T. U., Horn, K., & Jung, M. C. (2007). Thermal decomposition of ethylene on Si(1 1 1): Formation of the Si(1 1 1)sqrt(3) × sqrt(3):carbon structure. Surface Science, 601(3), 694–698. https://doi.org/10.1016/j.susc.2006.10.033

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