Electrical characterization of vacuum thermally deposited Aluminium thin film

Abstract

Vacuum thermal evaporation technique is employed in depositing thin film of Aluminium on the microscopic glass substrate using Edward 090-10-895 B Auto 306 Vacuum Coating System. The deposition is uniform precisely between 161 and 294 urn of total scan length 350 μm. This range is achieved through Dektak 150 Surface Stylus Profiler. The uniform deposition within this range may be attributed to strong adhesion between Aluminium film and microscopic glass substrate, proper directness of film from the source to the target in the vacuum chamber of Evaporator and pure, uncontaminated film deposition at the region. The highest Roughness, Rp of 2700 A0 (Angstrom) is obtained between 133 and 140 μm of the total scan length, 350 μm. The lowest roughness, Rv of -250 A0 which exists just at the edge of the substrate is obtained. We adopt Four-point probe collinear technique to obtain the film resistivity using Keithley, 4200 model Semiconductor Characterization System (SCS). The resistivity and conductivity values are-4.6E-06 Ω cm and -2.17391 × l05/Ω/cm, respectively. The conductivity value of Aluminium (Al) film as dopant can enhance the performance of the doped material and thus improve the conversion efficiency and other electrical properties of some materials used in fabricating solar cell. © Medwell Journals, 2010.