PEDOT:PSS/GaAs1-xBi x organic-inorganic solar cells

Abstract

We demonstrated that poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/GaAs1-xBi x organic-inorganic solar cells, which were fabricated by spin-coating PEDOT:PSS onto GaAs1-xBi x thin films grown via molecular beam epitaxy, can capture near-infrared light. The dark current-voltage characteristics of each fabricated solar-cell exhibited diode-like rectification with an ideality factor between 1.5 and 2.0. The open-circuit voltages of the solar cells decreased with increasing the Bi composition in the GaAs1-xBi x thin films. The spectral response revealed that the absorption edges of the solar cells were red-shifted as the Bi composition increased, reaching ∼1 eV in the near-infrared region.