Origin of Na causing potential-induced degradation for p-type crystalline Si photovoltaic modules

Abstract

This paper presented whether Na ion in the front cover glass is absolute root cause of potential-induced degradation (PID) for p-type crystalline Si photovoltaic (PV) modules or not. P-type monocrystalline Si PV modules with and without the front cover glass, and with and without intentional Na contamination were subjected to PID test. Even without the front cover glass, a decrease in shunt resistance which is a characteristic feature of PID for p-type crystalline Si PV modules has been observed. Intentional Na incorporation on the cell or encapsulant also brings about remarkable PID. These results indicated that Na ion in the front cover glass is not a necessary condition for PID. Furthermore, PID occurs regardless of origin of Na ions. Relationship between PID and leakage current will be also discussed.