Abstract
We report the fabrication and optical characterization of Yb3+-doped waveguide amplifiers (YDWA) on the thin film lithium niobate fabricated by photolithography assisted chemo-mechanical etching. The fabricated Yb3+-doped lithium niobate waveguides demonstrates low propagation loss of 0.13 dB/cm at 1030 nm and 0.1 dB/cm at 1060 nm. The internal net gain of 5 dB at 1030 nm and 8 dB at 1060 nm are measured on a 4.0 cm long waveguide pumped by 976 nm laser diodes, indicating the gain per unit length of 1.25 dB/cm at 1030 nm and 2 dB/cm at 1060 nm, respectively. The integrated Yb3+-doped lithium niobate waveguide amplifiers will benefit the development of a powerful gain platform and are expected to contribute to the high-density integration of thin film lithium niobate based photonic chip.
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CITATION STYLE
Zhang, Z., Fang, Z., Zhou, J., Liang, Y., Zhou, Y., Wang, Z., … Cheng, Y. (2022). On-Chip Integrated Yb3+-Doped Waveguide Amplifiers on Thin Film Lithium Niobate. Micromachines, 13(6). https://doi.org/10.3390/mi13060865
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