Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAsB substrates covered with a thin SiO x layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was found that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, the formation of a Ga0.2In0.8As alloy was observed if the growth was performed on samples covered by a defective oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Ga concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers. © 2013 International Union of Crystallography Printed in Singapore - all rights reserved.
Davydok, A., Rieger, T., Biermanns, A., Saqib, M., Grap, T., Lepsa, M. I., & Pietsch, U. (2013). Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAsB. Journal of Applied Crystallography, 46(4), 893–897. https://doi.org/10.1107/S0021889813010522