X-ray absorption near edge structures of silicon nitride thin film by pulsed laser deposition

Abstract

Silicon nitride thin film was fabricated by pulsed laser deposition using KrF excimer laser and a silicon nitride compact as a target. The deposition was carried out on Al2O3 (0001) at 1173 K in N2 gas pressure of 0.27Pa. The X-ray diffraction did not provide any structural information of the deposited thin films except that it is composed of amorphous and/or micro-crystalline structure. X-ray absorption near edge structures at Si-K edge revealed that local arrangement of Si is not random. It should be composed of SiN4 unit similar to the case of α-Si 3N4 crystal. Metallic Si component cannot be found in XANES.