Transport transient of electrons in wurtzite InN: The effect of the band structure anisotropy

Abstract

We present a study on the transport transient of electrons in wurtzite InN subjected to an external electric field applied in the Γ-A or in the Γ-M directions. The electron drift velocity overshoot is shown to change with the field direction, being stronger in the latter than in the former case. This behavior is explained on the basis of the energy dependence of the band flattening, which is weaker in the Γ-A than in the Γ-M direction, and gives rise to a heavier electron effective mass. © 2002 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.