Abstract
Measurements of linear elastic and piezoelectric constants of gallium nitride by bulk acoustic waves are reported. All material properties, including static dielectric constants by capacitance method and density by x-ray method, were determined, using semi-insulating ammonothermally grown w-GaN. The obtained values: c11 = 366.9 ± 0.4 GPa, c12 = 135.0 ± 0.6 GPa, c13 = 97.5 ± 0.2 GPa, c33 = 398.1 ± 0.6 GPa, c44 = 99.1 ± 0.2 GPa, e15 = -0.36 ± 0.03 C m-2, e31 = -0.41 ± 0.04 C m-2, e33 = 0.86 ± 0.04 C m-2, = (9.3 ± 0.3), and = (10.3 ± 0.3) are proposed as the new standard, confirming only some results from the very sparse and ambiguous published data.
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Witczak, P., Witczak, Z., Jemielniak, R., Krys̈ko, M., Krukowski, S., & Boćkowski, M. (2015). Linear piezoelectricity material constants for ammonothermal gallium nitride measured by bulk acoustic waves. Semiconductor Science and Technology, 30(3). https://doi.org/10.1088/0268-1242/30/3/035008
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