Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

Abstract

We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. In0.5 Ga0.5 As quantum dots embedded in an In0.15 Ga0.85 AsGaAs quantum well (QW) or a GaAs Al0.2 Ga0.8 As QW have been incorporated into photodetectors and were characterized. A spectral response in the 3-5 μm atmospheric window has been achieved by adopting the GaAs Al0.2 Ga0.8 As QW. © 2007 American Institute of Physics.