Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si0.1Ge0.9, we study pure spin current transport in a degenerate SiGe alloy (n > 5.0 ' 1018 cm%3). Clear nonlocal spin-valve signals and Hanle effect curves, indicating generation, transport, and detection of pure spin currents, are observed. The spin diffusion length and spin lifetime of the Si0.1Ge0.9 layer at low temperatures are reliably estimated to be >0.5 µm and >0.2 ns, respectively. This study demonstrates the possibility of exploring physics and developing spintronic applications using SiGe alloys.
Naito, T., Yamada, M., Tsukahara, M., Yamada, S., Sawano, K., & Hamaya, K. (2018). Pure spin current transport in a SiGe alloy. Applied Physics Express, 11(5). https://doi.org/10.7567/APEX.11.053006