Pure spin current transport in a SiGe alloy

8Citations
Citations of this article
21Readers
Mendeley users who have this article in their library.

Abstract

Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si0.1Ge0.9, we study pure spin current transport in a degenerate SiGe alloy (n > 5.0 ' 1018 cm%3). Clear nonlocal spin-valve signals and Hanle effect curves, indicating generation, transport, and detection of pure spin currents, are observed. The spin diffusion length and spin lifetime of the Si0.1Ge0.9 layer at low temperatures are reliably estimated to be >0.5 µm and >0.2 ns, respectively. This study demonstrates the possibility of exploring physics and developing spintronic applications using SiGe alloys.

Cite

CITATION STYLE

APA

Naito, T., Yamada, M., Tsukahara, M., Yamada, S., Sawano, K., & Hamaya, K. (2018). Pure spin current transport in a SiGe alloy. Applied Physics Express, 11(5). https://doi.org/10.7567/APEX.11.053006

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free