The use of the "+U" correction in describing defect states at metal oxide surfaces: oxygen vacancies on CeO2 and TiO2, and Li-doping of MgO?

20Citations
Citations of this article
22Readers
Mendeley users who have this article in their library.

Abstract

There are many examples of defects in strongly-correlated metal oxides for which density functional theory predicts electronic structures that qualitatively disagree with experimental data. This behaviour arises from the self-interaction error inherent to standard density functionals, and is demonstrated by both p- and n-type systems where the defect state is a small polaron associated with host lattice atoms. An approximate correction is to describe the electron - electron interactions in the orbitals of interest within the DFT+U formalism. This gives improved descriptions for systems where the states of interest are well represented by atomic-like orbitals. The qualitative failure of standard DFT and corresponding improvement achieved with DFT+U is illustrated for cases where the defect state is primarily associated with localised cation f and d states (O vacancies in CeO2 and TiO 2) and anion p states (Li-doped MgO). © 2009 The Surface Science Society of Japan.

Cite

CITATION STYLE

APA

Morgan, B. J., Scanlon, D. O., & Watson, G. W. (2009). The use of the “+U” correction in describing defect states at metal oxide surfaces: oxygen vacancies on CeO2 and TiO2, and Li-doping of MgO? In e-Journal of Surface Science and Nanotechnology (Vol. 7, pp. 389–394). The Japan Society of Vacuum and Surface Science. https://doi.org/10.1380/ejssnt.2009.389

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free