Interdiffusion of a few nanometers thick C layer with Mo and Si under annealing at a temperature of 600 C was studied using X-ray photoelectron spectroscopy sputter depth profiling. A strong diffusion asymmetry of C in a Mo-Si layered structure is observed. C does interdiffuse with Mo, however, even at 600 C, no interdiffusion of Si and C was observed. Based on these results, the thermal stability of Mo/Si-based layer structures was improved by depositing a Si/C/Mo2C/C/Si layer structure. This structure shows superior thermal stability at 600 C compared to the Mo2C/Si and Mo/Si layer structure. © 2013 Elsevier B.V. All rights reserved.
Bosgra, J., Veldhuizen, L. W., Zoethout, E., Verhoeven, J., Loch, R. A., Yakshin, A. E., & Bijkerk, F. (2013). Interactions of C in layered Mo-Si structures. Thin Solid Films, 542, 210–213. https://doi.org/10.1016/j.tsf.2013.06.082