Multifunctional spintronic device based on zigzag SiC nanoribbon heterojunction via edge asymmetric dual-hydrogenation

Abstract

The authors propose a method to obtain the multifunctional spintronic device by investigating the spin-resolved transport characteristics of zigzag SiC nanoribbon (zSiCNR) heterojunction via edge asymmetric dual-hydrogenation. The spin-resolved band structures show that the dual-hydrogenation on edge C or Si atoms all can change the initial metallicity of the pristine zSiCNR with the edge mono-hydrogenation to semiconductor in the presence of ferromagnetic field. The spin-resolved current-voltage characteristics of the zSiCNR heterojunction can show spin current rectification in the same rectify direction under the parallel magnetic field. The up-spin rectification ratio of our junction can be close to 1013 at −0.5 V, which is much larger than rectification ratios of the previous junctions induced by the anti-parallel magnetic field. The zSiCNR heterojunction also exhibits a perfect spin filtering behavior with 100% spin filtering efficiency in both positive and negative bias regions under the anti-parallel magnetic field. More interestingly, the magnetoresistance is achieved by manipulating the external magnetic field in our zSiCNR heterojunction with the giant magnetoresistance ratio 5000% at 0.5 V. Therefore, the zSiCNR heterojunction via edge asymmetric dual-hydrogenation can be designed into the multifunctional spintronic devices, which has broad application prospects in the field of future spintronics.