We report a fast, versatile photocurrent imaging technique to visualize the local photo response of solar energy devices and optoelectronics using near-field cathodoluminescence (CL) from a homogeneous quantum dot layer. This approach is quantitatively compared with direct measurements of high-resolution Electron Beam Induced Current (EBIC) using a thin film solar cell (n-CdS / p-CdTe). Qualitatively, the observed image contrast is similar, showing strong enhancement of the carrier collection efficiency at the p-n junction and near the grain boundaries. The spatial resolution of the new technique, termed Q-EBIC (EBIC using quantum dots), is determined by the absorption depth of photons. The results demonstrate a new method for highresolution, sub-wavelength photocurrent imaging measurement relevant for a wide range of applications. © 2013 Author(s).
CITATION STYLE
Yoon, H. P., Lee, Y., Bohn, C. D., Ko, S. H., Gianfrancesco, A. G., Steckel, J. S., … Zhitenev, N. B. (2013). High-resolution photocurrent microscopy using near-field cathodoluminescence of quantum dots. AIP Advances, 3(6). https://doi.org/10.1063/1.4811275
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