Effect of 'Al' concentration on spin-dependent resonant tunnelling in InAs/Ga1-yAlyAs symmetrical double-barrier heterostructures

Abstract

The effect of 'Al' concentration on spin-dependent tunnelling in strained non-magnetic symmetric double-barrier semiconductor has been theoretically investigated. The separation between spin-up and spin-down components, barrier transparency, polarization efficiency and tunnelling lifetime were calculated using the transfer matrix approach. The separation between spin-up and spin-down resonances and tunnelling lifetime were reported for the first time in the case of InAs/Ga1-yAlyAs heterostructures for various 'Al' concentrations and for various barrier widths. Cent percentage polarization can be obtained in this strained non-magnetic double-barrier semiconductor even without any external field.