Abstract
Interlayer exchange coupling (IEC) in epitaxially grown Co 2MnSi/X/Co2MnSi (X=Cr and V) trilayers has been studied for different thicknesses of X spacer layers. The samples were grown by UHV-compatible dc-sputtering on an MgO (001) substrate. Strong biquadratic coupling with an unusual large oscillation period (3.3-3.5 nm) was observed for X=Cr while no evidence for non-ferromagnetic type IEC was found for X=V. © 2007 IOP Publishing Ltd.
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CITATION STYLE
Bosu, S., Sakuraba, Y., Saito, K., Wang, H., Mitani, S., & Takanashi, K. (2007). Interlayer coupling in epitaxial Co2MnSi/X/Co2MnSi (X=Cr and V) trilayer structures. Journal of Physics: Conference Series, 83(1). https://doi.org/10.1088/1742-6596/83/1/012013
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