High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride

Abstract

A polycrystalline platinum pernitride (PtN2) thin-film was successfully synthesized via nitridation of a platinum thin-film deposited on α-Al2O3 substrate at the pressure of ∼50 GPa by using the laser-heated diamond anvil cell. The current-voltage characteristic and optical reflectance of the synthesized PtN2 thin-film were measured under ambient conditions. Combined with first-principles calculations, these experimental results have revealed that PtN2 exhibits semiconducting property with a bandgap of ∼2 eV. This high-pressure thin-film synthesis technique could also be applied for revealing the physical properties of other novel pernitrides synthesized under ultra-high pressure, which can offer new insights into the physical properties and functionality of the pernitrides and related nitrides.