One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Lee, C. H., Qin, S., Savaikar, M. A., Wang, J., Hao, B., Zhang, D., … Yap, Y. K. (2013). Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots. Advanced Materials, 25(33), 4544–4548. https://doi.org/10.1002/adma.201301339