Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots

40Citations
Citations of this article
76Readers
Mendeley users who have this article in their library.
Get full text

Abstract

One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cite

CITATION STYLE

APA

Lee, C. H., Qin, S., Savaikar, M. A., Wang, J., Hao, B., Zhang, D., … Yap, Y. K. (2013). Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots. Advanced Materials, 25(33), 4544–4548. https://doi.org/10.1002/adma.201301339

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free