Electrical characteristics and short-channel effect of c-axis aligned crystal indium gallium zinc oxide transistor with short channel length

Abstract

A channel length of a c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) transistor having low off-state current at a yA/μm level was decreased to 100 nm, and the electrical characteristics and short-channel effect of the CAAC-IGZO transistor were researched. As a result, we found that, in the CAAC-IGZO transistor with L = 100 nm, even with a gate insulator film having an equivalent oxide thickness (EOT) = 11 nm, an extremely small off-state current of 380 yA/μm at 85°C is maintained, in addition channel length dependence of the electrical characteristics is hardly seen. Favorable values of characteristics of the CAAC-IGZO transistor can be obtained, such as subthreshold slope (SS) = 77mV/dec, drain induced barrier lowering (DIBL) = 73mV/V, threshold voltage (Vth) = 0.65V, and on-state current (I on) = 65 μA/μm. These results suggest the possibility that the CAAC-IGZO transistor can be applied to an LSI in a deep submicron region. © 2014 The Japan Society of Applied Physics.