Area-selective atomic layer deposition enabled by competitive adsorption

Abstract

In this work, we investigate the atomic layer deposition (ALD) of ZrO2 thin films on Cu and SiO2 substrates, using Zr[N(C2H5CH3)]4 as the thin-film precursor, and H2O or O2 as the coreactants. Here, we introduce 3-hexyne as a coadsorbate molecule during the thin-film precursor half-cycle and examine its effect on the selectivity of growth. We find that 3-hexyne strongly inhibits growth on Cu, while having essentially no effect on the growth on SiO2. Calculations using dispersion-inclusive density functional theory verify that 3-hexyne undergoes sp → sp2 rehybridization on Cu, which results in strong chemisorption on the metal surface, while only binding weakly to SiO2 via nonbonded van der Waals/dispersion interactions. After 10 cycles of ALD using 3-hexyne as the coadsorbate, we observed the deposition of ∼1.5 nm of ZrO2 on SiO2. On a Cu substrate, we only detected <0.15 nm of ZrO2 after the same number of cycles of ALD. At this point in the process, we find evidence of the formation of cuprous oxide (Cu2O) from in situ x-ray photoelectron spectroscopy and a significant increase in the roughness of the Cu substrate. We conclude that both factors likely contribute to the loss of selectivity due to the formation of sites (e.g., Cu2O) that bind 3-hexyne less strongly and/or an increase in the density of highly reactive sites (e.g., steps, kinks) that promote dissociative chemisorption of the thin-film precursor.