Abstract
The photoluminescence analysis of CdS/CdTe interface layer of CdS/CdTe heterojunction has been carried out in the 15-100 K temperature range. An attempt to correlate observed PL features with the CdSxTe 1-x layer presence at the interface of the heterojunctions was made. It is assumed the 1.525 eV band has an excitonic origin and 1.37X PL band is a characteristic impurity band due to CdSTe layer. Comparative plots showing SnO2/CdTe PL spectra are given as well. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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CITATION STYLE
Vatavu, S., Zhao, H., Caraman, I., Gaşin, P., Morel, D., & Ferekides, C. (2009). Photoluminescence studies of the interface of CdS/CdTe heterojunctions. In Physica Status Solidi (C) Current Topics in Solid State Physics (Vol. 6, pp. 1299–1302). https://doi.org/10.1002/pssc.200881208
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