Semiconductor p-n and Metal-Semiconductor Junctions

  • Razeghi M
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Abstract

CHAPTER OBJECTIVES This chapter introduces several devices that are formed by joining two different materials together. PN junction and metal–semiconductor junction are analyzed in the forward-bias and reverse-bias conditions. Of particular importance are the concepts of the depletion region and minority carrier injection. Solar cells and light-emitting diode are presented in some detail because of their rising importance for renewable energy generation and for energy conservation through solid-state lighting, respectively. The metal–semiconductor junction can be a rectifying junction or an ohmic contact. The latter is of growing importance to the design of high-performance transistors.

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Razeghi, M. (2009). Semiconductor p-n and Metal-Semiconductor Junctions. In Fundamentals of Solid State Engineering (pp. 1–56). Springer US. https://doi.org/10.1007/978-0-387-92168-6_9

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