Parameter analysis of CNTFET

Abstract

In this paper, a parameter analysis of CNTFET is presented with different parameters variations such as gate to source voltage vgs, oxide thickness tox, gate oxide dielectric Kox, channel length L, source/drain spacer dielectric constant Kspa ect. All the parameters of CNTFET have been varied in CADENCE Virtuoso environment and verified with the preferred value of stanford VS-CNTFET model.