Doping silicon nanocrystals with boron and phosphorus

Abstract

The properties of silicon nanocrystals (Si NCs) that are usually a few nanometers in size can be exquisitely tuned by boron (B) and phosphorus (P) doping. Recent progress in the simulation of B- and P-doped Si NCs has led to improved explanation for B- and P-doping-induced changes in the optical properties of Si NCs. This is mainly enabled by comprehensive investigation on the locations of B and P in Si NCs and the electronic properties of B- and P-doped Si NCs. I remarks on the implications of newly gained insights on B- and P-doped Si NCs. Continuous research to advance the understanding of the doping of Si NCs with B and P is envisioned. © 2012 Xiaodong Pi.