 A CMOS Class-E Cascode Power Amplifier for GSM Application

Abstract

The design of A 2.4-GHz CMOS Class E cascode power amplifier (PA) for GSM applications in TSMC 0.18-μm CMOS technology present in this paper. Proposed Class E cascode PA topology is a single-stage topology in order to minimize the device stress problem. A parallel capacitor is connected across the transistors for efficiency enrichment also for dominating the effect of parasitic capacitances at the drain node. The simulation results point to that the PA delivers 12 dBm output power with 43.6% and 46.6% of power added efficiency (PAE) and drain efficiency (DE) respectively with 2.5-Volt power supply into a 50-Ω load. Index Terms-Class E, CMOS power amplifier, power added efficiency, switching amplifier.