Phase formation of nanosized InGaZnO4 obtained by the sol-gel method with different chelating agents

Abstract

The production of nano-sized semiconductor oxide materials, such as indium-gallium-zinc oxide (IGZO), will make it possible to use it for the transistors manufacture using printing methods. The sol-gel method is one of the widely known and used methods for producing nano-sized oxide materials. As is known, a chelating reagent (complexing agent) can influence both the synthesis process and the final phase composition. The results of sol-gel synthesis with various chelating reagents: citric acid, ethylene glycol, oxalic acid, urea, glycerol and sucrose are presented. The samples were studied by X-ray diffraction. It was found that ethylene glycol and glycerol as chelating reagents make it possible to obtain a homogeneous crystalline material at 900◦C with a YbFe2O4-type structure, R-3m (166) space group. Unit cell parameters and crystallite size (Halder-Wagner method) for InGaZnO4 single-phase samples were calculated.