Thin TiO2 Films Prepared by Low Pressure Chemical Vapor Deposition

Abstract

The preparation and the properties of titanium dioxide thin films have been studied with respect to its application as a new capacitor dielectric material in low‐power high‐density dynamic random access memory ultralarge scale integrated circuits. The films were deposited by a low pressure metal organic chemical vapor deposition process with tetra‐iso‐propyltitanate as the precursor metal organic material. The deposition was performed in a hot wall‐type vertical furnace at low temperatures (300–350°C). Very uniform thin films with a dielectric constant up to 70 were prepared showing the polycrystalline structure of anatase after the deposition. The electronic properties of the interface were investigated in detail using a metal‐insulator‐semiconductor structure. Stoichiometry, structure, as well as electrical properties of the layers were examined before and after an annealing treatment in oxygen ambient.