MoS2-Based Memristor: Robust Resistive Switching Behavior and Reliable Biological Synapse Emulation

Abstract

Memristors are recognized as crucial devices for future nonvolatile memory and artificial intelligence. Due to their typical neuron-synapse-like metal–insulator–metal(MIM) sandwich structure, they are widely used to simulate biological synapses and have great potential in advancing biological synapse simulation. However, the high switch voltage and inferior stability of the memristor restrict the broader application to the emulation of the biological synapse. In this study, we report a vertically structured memristor based on few-layer MoS (Formula presented.). The device shows a lower switching voltage below 0.6 V, with a high ON/OFF current ratio of (Formula presented.), good stability of more than 180 cycles, and a long retention time exceeding 3 × 10 (Formula presented.) s. In addition, the device has successfully simulated various biological synaptic functions, including potential/depression propagation, paired-pulse facilitation (PPF), and long-term potentiation/long-term depression (LTP/LTD) modulation. These results have significant implications for the design of a two-dimensional transition-metal dichalcogenides composite material memristor that aim to mimic biological synapses, representing promising avenues for the development of advanced neuromorphic computing systems.