Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches

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Abstract

Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.

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Meija, R., Livshits, A. I., Kosmaca, J., Jasulaneca, L., Andzane, J., Biswas, S., … Erts, D. (2019). Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches. Nanotechnology, 30(38). https://doi.org/10.1088/1361-6528/ab2b11

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