In situ optimization of co-implantation and substrate temperature conditions for nitrogen-vacancy center formation in single-crystal diamonds

Abstract

In this paper, we present first results of in situ characterization of nitrogen vacancy (NV)-center formation in single-crystal diamonds after implantation of low-energy nitrogen ions (7.7 keV), co-implantation of hydrogen, helium and carbon ions and in situ annealing. Diamond samples were implanted either at room temperature or at 780°C. We found that dynamic annealing during co-implantation enhances NV-center formation by up to 25%. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.