Abstract
A novel MEMS-based tunable meander inductor is reported. The inductor is fabricated using a single metal layer in a low-cost commercially available Metal-MUMPs. process. The mutual inductance of the meander inductor is tuned by changing the gaps between the meander turns using a chevron-type thermal actuator. An air trench underneath the inductor has been made to reduce the loss in the silicon substrate and improve quality factor (Q-factor). Tuning range of ∼50.8% and maximum Q-factor of 8.17 have been achieved at 5.79 GHz by stretching the meander inductor for 22 μm. The total footprint of the device is 0.58 mm2.
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CITATION STYLE
Khan, F., Zhu, Y., Lu, J., & Pal, J. (2015). MEMS-based tunable meander inductor. Electronics Letters, 51(20), 1582–1583. https://doi.org/10.1049/el.2015.2495
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